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Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
* * * * * * * *
TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz > 30 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 1mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 75-125mA (Under RF Drive, Id rises from 75mA to 240mA) Chip Dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in)
Product Description
The TriQuint TGF2021-01 is a discrete 1 mm pHEMT which operates from DC-12 GHz. The TGF2021-01 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-01 typically provides > 30 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications. The TGF2021-01 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-01 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
Primary Applications
* * * * *
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V I
+
TGF2021-01
Value
12.5 V -5V to 0V 470 mA 7 mA 25 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 86.5 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 300 375 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 C, Nominal) SYMBOL
Power Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 30.8 50 11 26.6 0.464 0.527 148.0 31.5 48 11 31.9 0.496
TGF2021-01
PARAMETER
Vd = 10V Idq = 75mA
Vd = 12V Idq = 75mA
UNITS
dBm % dB pF -
0.539 141.0
Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance
30 59 11.5 49.0 0.539
30.7 55 11 55.6 0.505 0.643 126.3
dBm % dB pF -
Load Reflection coefficient 0.642 130.6 L 3/ 1/ Values in this table are taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance
(channel to backside of carrier)
Test Conditions
Vd = 12 V Idq = 75 mA Pdiss = 0.9 W
TCH (oC)
148
TJC (qC/W)
86.5
TM (HRS)
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
TGF2021-01
Measured Fixtured Data
Power tuned data at 10GHz
33 32 31 30 29 28 27 26 25 24 23 22 21 20 11 320 300 280 260 240 220 200 180 160 140 120 100 80 60 18 19 20 21 22 23 24
12 11 10 9 72 66 60 54 42 36 30
Vd=12V, Id=75mA Vd=10V, Id=75mA
Vd=12V, Id=75mA Vd=10V, Id=75mA
Pout (dBm)
Gain (dB)
Id (mA)
7 6 5 4 3 2 1 0 11 12 13 14 15 16 17 18 19 20 21 22 23 24
`
24 18 12 6 0
12
13
14
15
16
17
Input Power (dBm)
Input Power (dBm)
For power tuned devices at 10GHz Input matched for maximum gain & output load is: Vd=12V, Idq=75mA: Rp = 31.9 , Cp = 0.477pF, = 0.54, = 141 Vd=10V, Idq=75mA: Rp = 26.6 , Cp = 0.464pF, = 0.53, = 148
Efficiency tuned data at 10GHz
33 32 31 30 29 28 27 26 25 24 23 22 21 20 11 12 320 300 280 260 240 220 200 180 160 140 120 100 80 60 16 17 18 19 20 21 22 23 24
Vd=12V, Id=75mA Vd=10V, Id=75mA
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 11 12 13 14 15 16 17 18 19
Vd=12V, Id=75mA Vd=10V, Id=75mA
60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 24
Pout (dBm)
Gain (dB)
Id (mA)
13
14
15
20
21
22
23
Input Power (dBm)
Input Power (dBm)
For efficiency tuned devices at 10GHz: Input matched for maximum gain & output load is: Vd=12V, Idq=75mA: Rp = 55.6 , Cp = 0.505pF, = 0.96, = 113 Vd=10V, Idq=75mA: Rp = 49.0 , Cp = 0.539pF, = 0.64, = 131
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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PAE (%)
PAE (%)
8
48
Advance Product Information
June 8, 2005
Linear Model for 1mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2021-01
vi
-
VvAC@HUApryy SrsrrprAQyhr
Ls
Rp, Cp
Rs
Source Gate Drain
UPC
Source Source
Source
L - via = 0.0135 nH (2x)
UPC = 1mm Unit pHEMT Cell
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Idq = 75mA
0.45 0.14 0.41 0.310 2.39 1.22 0.20 149.1 0.115 6.29 0.009 0.089 0.120 33000 349000
Vd = 8V Idq = 100mA
0.45 0.14 0.43 0.318 2.58 1.19 0.201 152.3 0.107 6.63 0.009 0.089 0.120 33000 425000
Vd = 8V Idq = 125mA
0.45 0.14 0.46 0.314 2.70 1.20 0.201 158.8 0.101 6.99 0.009 0.089 0.120 35100 405000
Vd = 10V Idq = 75mA
0.45 0.17 0.41 0.296 2.61 1.24 0.198 171.8 0.101 7.19 0.009 0.089 0.120 28900 305000
Vd = 10V Idq = 100mA
0.450 0.160 0.450 0.303 2.74 1.23 0.199 173.7 0.098 7.410 0.010 0.089 0.120 35700 366000
Vd = 12V Idq = 75mA
0.45 0.19 0.410 0.286 2.72 1.27 0.196 187.9 0.096 7.79 0.010 0.089 0.120 24400 238000
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
Unmatched S-parameters for 1 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 75mA
TGF2021-01
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.270 -61.01 25.258 145.86 -33.563 57.93 -5.656 -27.36 1 -0.569 -99.70 22.646 124.02 -30.161 38.19 -7.703 -43.13 1.5 -0.733 -121.84 20.206 110.84 -29.091 27.10 -9.305 -51.41 2 -0.817 -135.39 18.158 101.98 -28.656 20.33 -10.338 -56.61 2.5 -0.862 -144.39 16.443 95.34 -28.452 15.79 -10.943 -60.67 3 -0.889 -150.81 14.983 89.97 -28.353 12.52 -11.253 -64.34 3.5 -0.904 -155.63 13.718 85.36 -28.308 10.03 -11.362 -67.88 4 -0.914 -159.42 12.603 81.26 -28.295 8.05 -11.336 -71.37 4.5 -0.921 -162.50 11.609 77.50 -28.303 6.43 -11.218 -74.81 5 -0.924 -165.08 10.711 73.99 -28.326 5.07 -11.036 -78.20 5.5 -0.926 -167.27 9.894 70.66 -28.360 3.91 -10.811 -81.53 6 -0.927 -169.19 9.142 67.48 -28.403 2.90 -10.558 -84.79 6.5 -0.927 -170.88 8.447 64.40 -28.455 2.03 -10.287 -87.98 7 -0.926 -172.41 7.801 61.42 -28.512 1.26 -10.005 -91.08 7.5 -0.924 -173.79 7.196 58.51 -28.576 0.59 -9.718 -94.10 8 -0.922 -175.06 6.627 55.67 -28.644 0.01 -9.430 -97.04 8.5 -0.920 -176.24 6.090 52.87 -28.717 -0.50 -9.143 -99.90 9 -0.917 -177.33 5.582 50.13 -28.794 -0.94 -8.859 -102.69 9.5 -0.914 -178.37 5.099 47.42 -28.874 -1.31 -8.579 -105.42 10 -0.911 -179.34 4.639 44.75 -28.958 -1.61 -8.306 -108.07 10.5 -0.907 179.73 4.198 42.12 -29.044 -1.85 -8.039 -110.67 11 -0.903 178.84 3.777 39.51 -29.133 -2.03 -7.779 -113.20 11.5 -0.899 177.99 3.372 36.93 -29.223 -2.15 -7.526 -115.68 12 -0.895 177.17 2.982 34.38 -29.315 -2.20 -7.280 -118.11 12.5 -0.891 176.37 2.606 31.85 -29.407 -2.21 -7.042 -120.49 13 -0.886 175.61 2.242 29.35 -29.500 -2.15 -6.811 -122.83 13.5 -0.882 174.86 1.890 26.87 -29.592 -2.03 -6.587 -125.12 14 -0.877 174.13 1.549 24.41 -29.684 -1.86 -6.371 -127.37 14.5 -0.872 173.42 1.218 21.97 -29.774 -1.63 -6.161 -129.57 15 -0.867 172.72 0.896 19.55 -29.863 -1.35 -5.959 -131.75 15.5 -0.862 172.04 0.582 17.14 -29.949 -1.01 -5.762 -133.88 16 -0.857 171.37 0.276 14.76 -30.031 -0.62 -5.573 -135.98 16.5 -0.852 170.72 -0.022 12.39 -30.111 -0.18 -5.389 -138.05 17 -0.847 170.07 -0.314 10.04 -30.185 0.31 -5.212 -140.09 17.5 -0.842 169.43 -0.600 7.70 -30.256 0.85 -5.040 -142.09 18 -0.837 168.80 -0.880 5.38 -30.320 1.43 -4.874 -144.07 18.5 -0.832 168.18 -1.155 3.08 -30.379 2.06 -4.713 -146.02 19 -0.827 167.57 -1.424 0.79 -30.431 2.72 -4.557 -147.94 19.5 -0.821 166.96 -1.689 -1.49 -30.476 3.42 -4.407 -149.83 20 -0.816 166.36 -1.950 -3.75 -30.515 4.14 -4.261 -151.70 20.5 -0.811 165.77 -2.206 -5.99 -30.545 4.89 -4.120 -153.55 21 -0.806 165.18 -2.459 -8.23 -30.568 5.67 -3.984 -155.37 21.5 -0.801 164.60 -2.709 -10.45 -30.582 6.46 -3.852 -157.16 22 -0.796 164.02 -2.955 -12.65 -30.588 7.26 -3.724 -158.94 22.5 -0.791 163.44 -3.198 -14.85 -30.586 8.07 -3.600 -160.69 23 -0.786 162.87 -3.439 -17.03 -30.576 8.89 -3.479 -162.42 23.5 -0.781 162.31 -3.677 -19.21 -30.557 9.70 -3.363 -164.12 24 -0.776 161.75 -3.913 -21.37 -30.530 10.51 -3.250 -165.81 24.5 -0.771 161.19 -4.147 -23.52 -30.495 11.30 -3.141 -167.48 25 -0.766 160.63 -4.379 -25.66 -30.453 12.09 -3.035 -169.13 25.5 -0.761 160.08 -4.609 -27.79 -30.404 12.85 -2.932 -170.75 26 -0.756 159.53 -4.837 -29.91 -30.347 13.59 -2.833 -172.36
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
TGF2021-01 Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
June 8, 2005
TGF2021-01
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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